Samsung has developed the industry’s first 12-stack HBM3E DRAM and the highest-capacity HBM product to date. The HBM3E 12H provides an all-time high bandwidth of up to 1,280 gigabytes per second (GB/s) and an industry-leading capacity of 36 gigabytes (GB). Compared to the 8-stack HBM3 8H, both aspects have improved by more than 50%. The new memory solution is based on Samsung’s 4th generation 10nm-class (14nm) fabrication technology, which uses extreme ultraviolet (EUV) lithography. It also applies advanced thermal compression non-conductive film (TC NCF), which allows the 12-layer products to have the same height specification as 8-layer ones. The technology enhances vertical density and thermal properties, while also enabling the use of bumps of various sizes between the chips for better signaling and heat dissipation.
The HBM3E 12H is expected to be an optimal solution for future systems that require more memory, especially for artificial intelligence (AI) and high-performance computing (HPC) applications. Samsung estimates that its 12-Hi HBM3E 36 GB modules can increase the average speed for AI training by 34% and expand the number of simultaneous users of inference services by more than 11.5 times. Samsung has already begun providing samples of the HBM3E 12H to customers, with mass production scheduled to commence in the first half of this year. However, the company has not disclosed the pricing or availability of the new memory products yet.
High-Bandwidth Memory Chips
Samsung Released a 12-Stack HBM3E for AI Workloads
Trend Themes
1. High-bandwidth Memory Expansion - Samsung's 12-stack HBM3E offers an industry-leading capacity of 36 gigabytes and a bandwidth of up to 1,280 GB/s, providing disruptive innovation opportunities for data-intensive applications.
2. Advanced Memory Solutions - Using 4th generation 10nm-class technology with EUV lithography, Samsung's HBM3E 12H enhances vertical density and thermal properties, creating opportunities for next-level memory innovations.
3. AI and HPC Optimization - Samsung's HBM3E 12H modules are poised to revolutionize AI training and HPC applications, potentially increasing AI training speeds by 34% and accommodating a significant number of simultaneous users for inference services.
Industry Implications
1. Semiconductor Manufacturing - In the semiconductor industry, the development of high-capacity and high-bandwidth memory products like Samsung's HBM3E 12H presents disruptive innovation opportunities for improved performance and efficiency.
2. Artificial Intelligence Technology - For artificial intelligence industries, the introduction of Samsung's 12-stack HBM3E with increased memory capacity can fuel advancements in AI training speeds and scalability for wider applications.
3. High-performance Computing Sector - In the high-performance computing sector, the debut of Samsung's HBM3E 12H modules sets the stage for optimizing computing power and memory capabilities to meet the demands of next-generation HPC systems.